EON™ 1040 EUV Photoresist
EONTM 1040 is a positive EUV photoresist developed for high resolution lines/space applications. It can also provide excellent patterning capability of multi-pitch lines/space with one exposure. EONTM 1040 is offered in viscosities which will cover thickness ranges from 35nm to 45nm
Features & Benefits
- High resolution capability (<40P lines/space)
- Excellent LWR
- Wide process window
- Outstanding stochastic post-etch defect control
- Good etch resistance
Product Details
36P dense lines of EONTM 1040
40nm Film THK on Si hard-mask
For further product information please contact your Qnity
Technical Sales Representative.
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