Eon™ photoresists for EUV

 
 
 

Eon™ photoresists for EUV

Eon™ photoresists for extreme ultraviolet (EUV) lithography provide robust, high-resolution patterning for contact hole and line and space features, optimized specifically for next-generation DRAM memory and logic EUV manufacturing processes.  

Features & Benefits

  • High resolution capability (<40P line/space and <35P contact hole) with excellent line width roughness (LWR)/critical dimension uniformity (CDU)
  • Wide process window with good etch resistance
  • Outstanding stochastic post-etch/blob defect control

Applications

Eon™ photoresists are designed for fabrication of critical features in advanced logic and memory devices.

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For further product information please contact your Qnity
Technical Sales Representative.

 
 
 
 
 
 
 
 
 

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