ICPT International Conference on Planarization/CMP Technology 2026

 
 
 

ICPT International Conference on Planarization/CMP Technology 2026

October 19 – 22

Seoul, South Korea

Blogs
ICPT International Conference on Planarization/CMP Technology 2026
 
 
 

Qnity is proud to sponsor ICPT 2026. Visit us to meet our experts and join our technical presentations to learn how we are driving advances in semiconductor manufacturing through CMP innovations that improve yield, reduce defects, and enable next-generation device architectures.

 

  • October 20 (Tue): 08:30 - 18:00

  • October 21 (Wed): 08:30 - 18:00
  • October 22 (Thu): 08:30 - 13:00

 

 

From Materials to Insight: Enabling the Next Generation of Semiconductor Innovation
Luncheon Keynote Speech
Julia Woertink VP of Technology, Semiconductor Technologies at Qnity
October 20, 2026 | 12:55

 
 
 

Advanced Tungsten Slurry with Low Etching Rate, High W / Oxide Selectivity, and E-O-E Free Topography 
Allison Hsu
October 20, 2026 | 10:40–11:00  

 
 
 

Qnity Cu PCMP Technology Evolution from Mature to Advanced Node 
Ping Hsu
October 21, 2026 | 11:25–11:50  

 
 
 
 
 
 

October 21, 2026 | 13:00 – 15:10 | Gallery 1F

 
 
 

[P-044] Metal Compatible Ceria Post-CMP Cleans 
Volley Wang

 
 
 

[P-047] A Predictive AFM Adhesion Force Method for PCMP Cleaning Efficiency 
Ray Chen

 
 
 

[P-049] Electrochemical and Q-Time Integrated Methodology for Screening Cu Surface Stability in Post-CMP Cleaning 
Fred Huang

 
 
 

[P-052] Ceria-Induced Particle Defects Formation and a New Post-CMP Cleaning Strategy to Improve Yield 
Shu-Yi Meng

 
 
 

[P-053] Mechanism Study of pH Shock Effect for Organometallic Residue Formation in PCMP Process 
Jacky Cheng

 
 
 

[P-062] Semi-Automated Topography Analysis for Post-CMP Surface Planarity Assessment 
Daniel Chang

 
 
 

[P-078] Oxidation-Selective Chemically Controlled CMP Strategy for Molybdenum-Tungsten Integration in Advanced MOL Contacts 
James Hsu

 
 
 

[P-115] Effects of Material Removal Rate on Scratch Defects in Bulk Cu CMP 
Te-Chun Wang

 
 
 

[P-119] Control of Edge Profile Asymmetry During CMP 
Da-Shiuan Chiou

 
 
 
 
 
 
 
 
 

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