Functional Sublayers

 
 
 

Functional Sublayers

Our functional sublayer products, including DUV and ArF bottom anti-reflective coating (BARC) materials, gap-fill materials, and extreme ultraviolet (EUV) underlayers, provide critical functions for the manufacture of logic and memory devices.

 

Features & Benefits
  • Control of reflectivity and pattern profile of DUV photoresists
  • Improvement of process window of DUV and EUV photoresists
  • Outstanding gap-fill capability (sub 2nm) with strong wet etch resistance
  • Defect improvement of EUV patterning
  • Fast dry etching rate
  • Low outgassing 

 

Applications
  • Wide range of KrF, ArF-dry/immersion layers across various logic nodes
  • Implant and replacement metal gate (RMG) of advanced logic devices
  • Advanced DRAM and logic positive tone development (PTD)/negative tone development (NTD) EUV applications

 

Featured products

 

For further product information please contact your Qnity
Technical Sales Representative.

 
 
 
 
 
 

Lithography Materials 

 
 
 

  • Functional Sublayers

    Functional sublayer materials enabling advanced DUV, ArF, and EUV patterning for logic and memory devices

  • Advanced Overcoats

    Used in conjunction with photoresists, Qnity’s advanced overcoat materials are designed to prevent defects and improve the lithography process window, enabling finer feature patterns.

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  • Photoresists

    Qnity’s robust, production-proven photoresist product line offers materials options that meet the requirements across generations of lithography processes.

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    Eon™ photoresists for extreme ultraviolet (EUV) lithography provide robust, high-resolution patterning for contact hole and line and space features, optimized specifically for next-generation DRAM memory and logic EUV manufacturing processes.

    Epic™ photoresists are a series of resists widely used for 193 nm (ArF) processes with and without topcoats. Epic™ IM photoresists are designed for the unique environment created by immersion lithography, in which water between the lens and the wafer enables exposure of finer patterns.

    Our Microposit™ g-line (436nm) and Megaposit™ i-line (365nm) and photoresists deliver reliable, high-precision patterning solutions for a wide range of semiconductor and electronic device manufacturing processes.

    Our UV™ KrF photoresists, designed for 248nm excimer laser lithography, deliver superior resolution and process reliability for advanced semiconductor manufacturing.

  • Ancillary Lithography Materials

    Qnity’s roots run deep in its production-proven line of ancillary lithography products. From developers, removers, and other enhancement chemistries, we support a total lithography solution.

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  • Electronic Grade Polymers

    DUV and 193nm photoresist performance begins with the polymer, and Qnity electronic grade polymers continue to improve upon existing techniques for polymer manufacture, isolation, and evaluation.

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